FQI4N80TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Current Rating :

3.9A

Rise Time :

45ns

Length :

9.9mm

Packaging :

Tube

Voltage - Rated DC :

800V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Elements :

1

Published :

2007

Element Configuration :

Single

Fall Time (Typ) :

35 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

3.9A

Terminal Finish :

Tin (Sn)

Series :

QFET®

JESD-609 Code :

e3

Turn On Delay Time :

16 ns

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

9.2mm

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Resistance :

3.6Ohm

Vgs (Max) :

±30V

Mount :

Through Hole

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Power Dissipation-Max :

3.13W Ta 130W Tc

Number of Pins :

3

Factory Lead Time :

8 Weeks

Turn-Off Delay Time :

35 ns

Drain to Source Breakdown Voltage :

800V

Width :

4.5mm

Avalanche Energy Rating (Eas) :

460 mJ

Weight :

2.084g

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

3.13W

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.95A, 10V