FQI4N90TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Current Rating :

4.1A

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Resistance :

3.3Ohm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

4 Weeks

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 2.1A, 10V

Drain to Source Breakdown Voltage :

900V

Weight :

2.084g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

4.2A

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Element Configuration :

Single

Fall Time (Typ) :

40 ns

FET Type :

N-Channel

Turn-Off Delay Time :

45 ns

Avalanche Energy Rating (Eas) :

570 mJ

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

JESD-609 Code :

e3

Power Dissipation :

3.13W

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

QFET®

ECCN Code :

EAR99

Power Dissipation-Max :

3.13W Ta 140W Tc

Voltage - Rated DC :

900V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Number of Elements :

1

Turn On Delay Time :

25 ns

Rise Time :

70ns