FQI4N25TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

52 mJ

Drain to Source Voltage (Vdss) :

250V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Series :

QFET®

Rds On (Max) @ Id, Vgs :

1.75 Ω @ 1.8A, 10V

DS Breakdown Voltage-Min :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

3.13W Ta 52W Tc

Pbfree Code :

yes

Pin Count :

3

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

14.4A

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

3.6A

Surface Mount :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA