FQI4N20LTU
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- Mfr.Part #
- FQI4N20LTU
- Manufacturer
- onsemi
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3.8A I2PAK
- Stock
- 33,144
- In Stock ：
- 33,144
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- QFET®
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Published :
- 2000
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Supplier Device Package :
- I2PAK (TO-262)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 1.35Ohm @ 1.9A, 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 25V
- Power Dissipation-Max :
- 3.13W Ta 45W Tc
- Datasheets
- FQI4N20LTU
N-Channel Tube 1.35Ohm @ 1.9A, 10V ±20V 310pF @ 25V 5.2nC @ 5V 200V TO-262-3 Long Leads, I2Pak, TO-262AA
FQI4N20LTU Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 310pF @ 25V.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (5V 10V).
FQI4N20LTU Features
a 200V drain to source voltage (Vdss)
FQI4N20LTU Applications
There are a lot of ON Semiconductor
FQI4N20LTU applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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