FQI3P20TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Technology :

MOSFET (Metal Oxide)

Gate Charge (Qg) (Max) @ Vgs :

8 nC @ 10 V

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

250 pF @ 25 V

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

200 V

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

3.13W (Ta), 52W (Tc)

Product Status :

Obsolete

Mounting Type :

Through Hole

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

2.7Ohm @ 1.4A, 10V

Series :

QFET®

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

2.8A (Tc)

Supplier Device Package :

I2PAK (TO-262)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Package :

Tube