FQI32N12V2TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Series :

QFET®

Drain-source On Resistance-Max :

0.05Ohm

Number of Elements :

1

FET Type :

N-Channel

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

3.75W Ta 150W Tc

DS Breakdown Voltage-Min :

120V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

32A

Input Capacitance (Ciss) (Max) @ Vds :

1.86pF @ 25V

Rds On (Max) @ Id, Vgs :

50m Ω @ 16A, 10V

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

439 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

120V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

128A