FQI3N30TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.6A, 10V

Transistor Element Material :

SILICON

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

3.13W Ta 55W Tc

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

140 mJ

Peak Reflow Temperature (Cel) :

Not Applicable

Drain to Source Voltage (Vdss) :

300V

DS Breakdown Voltage-Min :

300V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN

Pin Count :

3

Number of Elements :

1

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pulsed Drain Current-Max (IDM) :

12.8A

Drain Current-Max (Abs) (ID) :

3.2A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V