FQI3N30TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

3.2A

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Mounting Type :

Through Hole

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-30 Code :

R-PSIP-T3

Pin Count :

3

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

12.8A

Drain to Source Voltage (Vdss) :

300V

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

300V

Power Dissipation-Max :

3.13W Ta 55W Tc

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

140 mJ

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Number of Terminations :

3

Series :

QFET®

Number of Elements :

1

Vgs (Max) :

±30V