FQI3N80TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

320 mJ

Number of Terminations :

3

Series :

QFET®

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.13W Ta 107W Tc

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3A

FET Type :

N-Channel

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Pin Count :

3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5 Ω @ 1.5A, 10V

Pulsed Drain Current-Max (IDM) :

12A

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

800V

Drain to Source Voltage (Vdss) :

800V

Pbfree Code :

yes

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drain-source On Resistance-Max :

5Ohm

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Position :

Single

Qualification Status :

COMMERCIAL

JESD-609 Code :

e3