FQI3N80TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

JESD-609 Code :

e3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±30V

Number of Terminations :

3

DS Breakdown Voltage-Min :

800V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

3A

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

12A

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

320 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

Not Applicable

Drain to Source Voltage (Vdss) :

800V

Number of Elements :

1

Surface Mount :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

5 Ω @ 1.5A, 10V

Power Dissipation-Max :

3.13W Ta 107W Tc

Drain-source On Resistance-Max :

5Ohm