FQI3N25TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.4A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

NOT SPECIFIED

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

11.2A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

250V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

3.13W Ta 45W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

2.8A

Avalanche Energy Rating (Eas) :

40 mJ

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Packaging :

Tube

Pbfree Code :

yes

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

FET Type :

N-Channel

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 10V

Number of Terminations :

3

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Drain to Source Voltage (Vdss) :

250V