FQI1P50TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Packaging :

Tube

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Surface Mount :

No

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.13W Ta 63W Tc

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

500V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

10.5 Ω @ 750mA, 10V

FET Type :

P-Channel

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

110 mJ

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

1.5A

Terminal Position :

Single

Qualification Status :

COMMERCIAL

Series :

QFET®

Pulsed Drain Current-Max (IDM) :

6A

Number of Elements :

1