FQI11N40TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

FET Type :

N-Channel

Pbfree Code :

yes

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

400V

Avalanche Energy Rating (Eas) :

520 mJ

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1.4pF @ 25V

JESD-30 Code :

R-PSIP-T3

Drain-source On Resistance-Max :

0.48Ohm

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

11.4A

DS Breakdown Voltage-Min :

400V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

480m Ω @ 5.7A, 10V

Packaging :

Tube

Pin Count :

3

Power Dissipation-Max :

3.13W Ta 147W Tc

Pulsed Drain Current-Max (IDM) :

46A

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Vgs (Max) :

±30V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Surface Mount :

No

Mounting Type :

Through Hole