FQI12N60TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Elements :

1

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

700m Ω @ 5.3A, 10V

Power Dissipation-Max :

3.13W Ta 180W Tc

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.7Ohm

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.9pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Vgs (Max) :

±30V

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

10.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Avalanche Energy Rating (Eas) :

790 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

600V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

42A

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

600V