FQI13N06LTU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

110m Ω @ 6.8A, 10V

Packaging :

Tube

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 5V

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

90 mJ

Drain Current-Max (Abs) (ID) :

13.6A

Drain-source On Resistance-Max :

0.14Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

3.75W Ta 45W Tc

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

13.6A Tc

Surface Mount :

No

Mounting Type :

Through Hole

Terminal Finish :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

FET Type :

N-Channel

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

54.4A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

SWITCHING

Pbfree Code :

yes

DS Breakdown Voltage-Min :

60V