FQI13N06LTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Mounting Type :

Through Hole

Power Dissipation-Max :

3.75W Ta 45W Tc

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

13.6A

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

13.6A Tc

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

54.4A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Voltage (Vdss) :

60V

Drain-source On Resistance-Max :

0.14Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Terminal Finish :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

90 mJ

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

110m Ω @ 6.8A, 10V

Pin Count :

3

Surface Mount :

No