FQI13N06TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

Drain to Source Voltage (Vdss) :

60V

Drain Current-Max (Abs) (ID) :

13A

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.135Ohm

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Rds On (Max) @ Id, Vgs :

135m Ω @ 6.5A, 10V

Pbfree Code :

yes

Number of Terminations :

3

JESD-609 Code :

e3

Series :

QFET®

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

52A

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

FET Type :

N-Channel

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

85 mJ

Power Dissipation-Max :

3.75W Ta 45W Tc

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING