FQI10N60CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

3.13W Ta 156W Tc

Surface Mount :

No

Drain-source On Resistance-Max :

0.73Ohm

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Packaging :

Tube

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

730m Ω @ 4.75A, 10V

Drain Current-Max (Abs) (ID) :

9.5A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

700 mJ

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Pbfree Code :

yes

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

38A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2.04pF @ 25V

Pin Count :

3

Number of Elements :

1

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Finish :

MATTE TIN