FQI11P06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Packaging :

Tube

Power Dissipation-Max :

3.13W Ta 53W Tc

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Drain-source On Resistance-Max :

0.175Ohm

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain Current-Max (Abs) (ID) :

11.4A

Qualification Status :

COMMERCIAL

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Rds On (Max) @ Id, Vgs :

175m Ω @ 5.7A, 10V

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

160 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

45.6A