FQI1P50TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500V

Transistor Application :

SWITCHING

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

6A

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

110 mJ

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

10.5 Ω @ 750mA, 10V

Packaging :

Tube

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

500V

Power Dissipation-Max :

3.13W Ta 63W Tc

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

1.5A

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

Not Applicable