FQI19N20TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

19.4A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

19.4A Tc

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

150m Ω @ 9.7A, 10V

Packaging :

Tube

Number of Elements :

1

Number of Terminations :

3

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

250 mJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

Not Applicable

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Pin Count :

3

Terminal Position :

Single

Series :

QFET®

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

200V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.15Ohm

Power Dissipation-Max :

3.13W Ta 140W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1.6pF @ 25V

Pulsed Drain Current-Max (IDM) :

78A