FQI17P10TU
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- Mfr.Part #
- FQI17P10TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Datasheet
- Download
- Description
- P-CHANNEL POWER MOSFET
- Stock
- 1,000
- In Stock ：
- 1,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Bulk
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Technology :
- MOSFET (Metal Oxide)
- Power Dissipation (Max) :
- 3.75W (Ta), 100W (Tc)
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100 pF @ 25 V
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Series :
- QFET™
- Rds On (Max) @ Id, Vgs :
- 190mOhm @ 8.25A, 10V
- Vgs (Max) :
- ±30V
- FET Type :
- P-Channel
- Product Status :
- Active
- FET Feature :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- 39 nC @ 10 V
- Package / Case :
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package :
- I2PAK (TO-262)
- Drain to Source Voltage (Vdss) :
- 100 V
- Current - Continuous Drain (Id) @ 25°C :
- 16.5A (Tc)
- Datasheets
- FQI17P10TU
MOSFET (Metal Oxide) P-Channel 190mOhm @ 8.25A, 10V ±30V 1100 pF @ 25 V 39 nC @ 10 V 100 V TO-262-3 Long Leads, I²Pak, TO-262AA
FQI17P10TU Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1100 pF @ 25 V.This transistor requires a drain-source voltage (Vdss) of 100 V.
FQI17P10TU Features
a 100 V drain to source voltage (Vdss)
FQI17P10TU Applications
There are a lot of Fairchild Semiconductor
FQI17P10TU applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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