FQI17N08TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

80V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Power Dissipation-Max :

3.13W Ta 65W Tc

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

16.5A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

66A

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Vgs (Max) :

±25V

Number of Elements :

1

Pin Count :

3

JESD-30 Code :

R-PSIP-T3

Series :

QFET®

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

16.5A

DS Breakdown Voltage-Min :

80V

Terminal Position :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain-source On Resistance-Max :

0.115Ohm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

100 mJ

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

115m Ω @ 8.25A, 10V

Peak Reflow Temperature (Cel) :

Not Applicable

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)