FQI16N25CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1.08pF @ 25V

Surface Mount :

No

Pin Count :

3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

250V

Avalanche Energy Rating (Eas) :

410 mJ

Current - Continuous Drain (Id) @ 25°C :

15.6A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

15.6A

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

270m Ω @ 7.8A, 10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

Not Applicable

Power Dissipation-Max :

3.13W Ta 139W Tc

Series :

QFET®

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

53.5nC @ 10V

Drain-source On Resistance-Max :

0.27Ohm

FET Type :

N-Channel

Number of Terminations :

3

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Terminal Position :

Single

Number of Elements :

1

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

250V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Reach Compliance Code :

Unknown

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

62.4A