FQI13N06TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

Unknown

Power Dissipation-Max :

3.75W Ta 45W Tc

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

135m Ω @ 6.5A, 10V

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.135Ohm

Terminal Position :

Single

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Mounting Type :

Through Hole

Series :

QFET®

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

13A

Transistor Application :

SWITCHING

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Surface Mount :

No

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

85 mJ

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Drain to Source Voltage (Vdss) :

60V

JESD-609 Code :

e3

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

52A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON