FQD7P20TM
- Mfr.Part #
- FQD7P20TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 5.7A DPAK
- Stock
- 208,886
- In Stock :
- 208,886
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 690m Ω @ 2.85A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -200V
- Voltage :
- 150V
- Turn-Off Delay Time :
- 30 ns
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Length :
- 6.6mm
- Turn On Delay Time :
- 15 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Nominal Vgs :
- 5 V
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 2.3mm
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 5.7A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 25V
- Drain to Source Voltage (Vdss) :
- 200V
- ECCN Code :
- EAR99
- Resistance :
- 690mOhm
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- -5V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 5.7mA
- Current :
- 13A
- Avalanche Energy Rating (Eas) :
- 570 mJ
- Current Rating :
- -5.7A
- Drain to Source Breakdown Voltage :
- -200V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta 55W Tc
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Published :
- 2000
- Fall Time (Typ) :
- 42 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Width :
- 6.1mm
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 2.5W
- FET Type :
- P-Channel
- Contact Plating :
- Tin
- Series :
- QFET®
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Rise Time :
- 110ns
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FQD7P20TM

P-Channel Tape & Reel (TR) 690m Ω @ 2.85A, 10V ±30V 770pF @ 25V 25nC @ 10V 200V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7P20TM Description
FQD7P20TM is a -200v P-Channel QFET? Power MOSFET. This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET FQD7P20TM has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The FQD7P20TM is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQD7P20TM Features
-
-5.7A, -200V, RDS(on) = 0.69Ω(Max.) @VGS = -10 V, ID = -2.85A
-
Low gate charge ( Typ. 19nC)
-
Low Crss ( Typ. 25pF)
-
100% avalanche tested
-
Drain-Source Voltage: -200v
FQD7P20TM Applications
-
Switched mode power supplies
-
Audio amplifier
-
DC motor control
-
Variable switching power applications
-
Lighting
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