FQD7N10LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

JESD-609 Code :

e3

Turn-Off Delay Time :

17 ns

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Avalanche Energy Rating (Eas) :

50 mJ

Width :

6.1mm

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Power Dissipation :

2.5W

Contact Plating :

Tin

Power Dissipation-Max :

2.5W Ta 25W Tc

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

2

Length :

6.6mm

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Weight :

260.37mg

Turn On Delay Time :

9 ns

REACH SVHC :

No SVHC

Rise Time :

100ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.9A, 10V

Continuous Drain Current (ID) :

5.8A

Case Connection :

DRAIN

Fall Time (Typ) :

50 ns

Transistor Element Material :

SILICON

Pbfree Code :

yes

Lead Free :

Lead Free

Resistance :

350mOhm

Threshold Voltage :

2V

Published :

2000

Series :

QFET®

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Mounting Type :

Surface Mount

Height :

2.3mm

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Current Rating :

5.8A

Voltage - Rated DC :

100V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2