FQD7N10LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Continuous Drain Current (ID) :

5.8A

Published :

2000

Element Configuration :

Single

Current Rating :

5.8A

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Height :

2.3mm

Weight :

260.37mg

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Number of Pins :

3

Rise Time :

100ns

Fall Time (Typ) :

50 ns

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

100V

Width :

6.1mm

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Turn-Off Delay Time :

17 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

50 mJ

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Transistor Element Material :

SILICON

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Threshold Voltage :

2V

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

9 ns

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.9A, 10V

Mount :

Surface Mount

Vgs (Max) :

±20V

JESD-609 Code :

e3

Radiation Hardening :

No

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta 25W Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Length :

6.6mm

ECCN Code :

EAR99

FET Type :

N-Channel

Voltage - Rated DC :

100V

Gate to Source Voltage (Vgs) :

20V

Resistance :

350mOhm