FQD7N10LTM

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Mfr.Part #
FQD7N10LTM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 5.8A DPAK
Stock
15,248
In Stock :
15,248

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
350m Ω @ 2.9A, 10V
Width :
6.1mm
Contact Plating :
Tin
ECCN Code :
EAR99
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
50 mJ
Rise Time :
100ns
Turn On Delay Time :
9 ns
Vgs (Max) :
±20V
REACH SVHC :
No SVHC
Power Dissipation :
2.5W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
FET Type :
N-Channel
Lead Free :
Lead Free
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
2.5W Ta 25W Tc
Packaging :
Tape and Reel (TR)
Case Connection :
DRAIN
Length :
6.6mm
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Weight :
260.37mg
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
5.8A Tc
Mounting Type :
Surface Mount
Factory Lead Time :
4 Weeks
Resistance :
350mOhm
Fall Time (Typ) :
50 ns
Threshold Voltage :
2V
Current Rating :
5.8A
Turn-Off Delay Time :
17 ns
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 5V
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Published :
2000
Number of Pins :
3
JESD-30 Code :
R-PSSO-G2
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
100V
Pbfree Code :
yes
Number of Terminations :
2
Voltage - Rated DC :
100V
Continuous Drain Current (ID) :
5.8A
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
2V @ 250μA
Height :
2.3mm
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 25V
Series :
QFET®
JESD-609 Code :
e3
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD7N10LTM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:2, FQD7N10LTM pinout, FQD7N10LTM datasheet PDF, FQD7N10LTM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD7N10LTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD7N10LTM


N-Channel Tape & Reel (TR) 350m Ω @ 2.9A, 10V ±20V 290pF @ 25V 6nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD7N10LTM Description

A patented planar stripe and DMOS technology is used to make the FQD7N10LTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology was specifically designed to reduce on-state resistance, give improved switching performance, and have a high avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications are all good candidates for FQD7N10LTM MOSFETs.


FQD7N10LTM Features

  • Low Crss ( Typ. 12pF)

  • 100% avalanche tested

  • 5.8A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 2.9A

  • Low gate charge ( Typ. 4.6nC)


FQD7N10LTM Applications

  • LED TV

  • Lighting

  • Automotive electronics

  • Consumer electronics

  • Power supplies

  • DC-to-DC converters

  • Motor controllers

  • Radio-frequency (RF)


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