FQD7N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

50 mJ

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

5.8A

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.9A, 10V

DS Breakdown Voltage-Min :

100V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

23.2A

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.35Ohm

Surface Mount :

yes

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Vgs (Max) :

±25V

Power Dissipation-Max :

2.5W Ta 25W Tc

Series :

QFET®

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63