FQD7N30TM
- Mfr.Part #
- FQD7N30TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 5.5A DPAK
- Stock
- 18,833
- In Stock :
- 18,833
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 2
- Published :
- 2000
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 25 ns
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Resistance :
- 700mOhm
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Length :
- 6.6mm
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Height :
- 2.3mm
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Voltage - Rated DC :
- 300V
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 5.5A
- Rise Time :
- 75ns
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Weight :
- 260.37mg
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 2.75A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 13 ns
- Width :
- 6.1mm
- Pulsed Drain Current-Max (IDM) :
- 22A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 300V
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 35 ns
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2.5W
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Current Rating :
- 5.5A
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Datasheets
- FQD7N30TM

N-Channel Tape & Reel (TR) 700m Ω @ 2.75A, 10V ±30V 610pF @ 25V 17nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7N30TM belongs to the family of N-channel enhancement mode QFET? MOSFETs that is designed to minimize on-state resistance, offer advanced switching performance and high avalanche energy strength based on planar stripe and DMOS technology. Due to its high quality and reliable performance, FQD7N30TM is well suited for switching mode power supplies, active power factor correction, and electronic lamp ballasts.
FQD7N30TM Features
Advanced switching performance
High avalanche energy strength
Planar stripe and DMOS technology
Available in the D-PAK package
FQD7N30TM Applications
Switching mode power supplies
Active power factor correction
Electronic lamp ballasts
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