FQD7N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2.5W Ta 50W Tc

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

300V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Voltage - Rated DC :

300V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Height :

2.3mm

Transistor Element Material :

SILICON

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2000

Rise Time :

75ns

Terminal Form :

Gull wing

Mount :

Surface Mount

Width :

6.1mm

Length :

6.6mm

Transistor Application :

SWITCHING

Radiation Hardening :

No

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Number of Pins :

3

Turn On Delay Time :

13 ns

Current Rating :

5.5A

Series :

QFET®

Fall Time (Typ) :

35 ns

Rds On (Max) @ Id, Vgs :

700m Ω @ 2.75A, 10V

Power Dissipation :

2.5W

Resistance :

700mOhm

Pulsed Drain Current-Max (IDM) :

22A

Turn-Off Delay Time :

25 ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

5.5A

Weight :

260.37mg

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V