FQD7N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

700mOhm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Series :

QFET®

Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 50W Tc

Height :

2.3mm

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Length :

6.6mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e3

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Rds On (Max) @ Id, Vgs :

700m Ω @ 2.75A, 10V

Fall Time (Typ) :

35 ns

Mount :

Surface Mount

Weight :

260.37mg

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

22A

Pbfree Code :

yes

Transistor Application :

SWITCHING

Rise Time :

75ns

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Turn-Off Delay Time :

25 ns

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Voltage - Rated DC :

300V

RoHS Status :

ROHS3 Compliant

Published :

2000

Continuous Drain Current (ID) :

5.5A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Current Rating :

5.5A

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

300V

Turn On Delay Time :

13 ns

Radiation Hardening :

No

Width :

6.1mm

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V