FQD7P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Avalanche Energy Rating (Eas) :

90 mJ

Number of Elements :

1

Width :

6.22mm

Factory Lead Time :

4 Weeks

Resistance :

450mOhm

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 25V

RoHS Status :

ROHS3 Compliant

Length :

6.73mm

Power Dissipation-Max :

2.5W Ta 28W Tc

Current Rating :

-5.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Terminations :

2

Case Connection :

DRAIN

JESD-609 Code :

e3

Fall Time (Typ) :

25 ns

Element Configuration :

Single

Weight :

260.37mg

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

50ns

Rds On (Max) @ Id, Vgs :

451m Ω @ 2.7A, 10V

Voltage - Rated DC :

-60V

Published :

2001

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-60V

Terminal Form :

Gull wing

Mount :

Surface Mount

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

FET Type :

P-Channel

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain to Source Voltage (Vdss) :

60V

Height :

2.39mm

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Continuous Drain Current (ID) :

5.4A

Turn On Delay Time :

7 ns

Turn-Off Delay Time :

7.5 ns

Gate to Source Voltage (Vgs) :

25V