FQD7N20LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Power Dissipation-Max :

2.5W Ta 45W Tc

Rise Time :

125ns

Turn On Delay Time :

12 ns

Power Dissipation :

2.5W

Continuous Drain Current (ID) :

5.5A

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Lead Free :

Lead Free

Number of Pins :

3

Mount :

Surface Mount

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Voltage - Rated DC :

200V

Weight :

260.37mg

Fall Time (Typ) :

65 ns

Rds On (Max) @ Id, Vgs :

750m Ω @ 2.75A, 10V

FET Type :

N-Channel

Turn-Off Delay Time :

20 ns

Mounting Type :

Surface Mount

Element Configuration :

Single

Drain-source On Resistance-Max :

0.78Ohm

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

22A

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Current Rating :

5.5A

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

200V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Radiation Hardening :

No