FQD7P06TM_NB82050
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- Mfr.Part #
- FQD7P06TM_NB82050
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 5.4A DPAK
- Stock
- 5,952
- In Stock ：
- 5,952
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- QFET®
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Resistance :
- 450mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- FET Type :
- P-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 25 ns
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- -60V
- Drain to Source Voltage (Vdss) :
- 60V
- Rise Time :
- 50ns
- Weight :
- 260.37mg
- Power Dissipation-Max :
- 2.5W Ta 28W Tc
- Power Dissipation :
- 2.5W
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 295pF @ 25V
- Vgs (Max) :
- ±25V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 5.4A
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 7.5 ns
- Rds On (Max) @ Id, Vgs :
- 451m Ω @ 2.7A, 10V
- Datasheets
- FQD7P06TM_NB82050
P-Channel Tape & Reel (TR) 451m Ω @ 2.7A, 10V ±25V 295pF @ 25V 8.2nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7P06TM_NB82050 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 295pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5.4A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 7.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
FQD7P06TM_NB82050 Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 7.5 ns
a 60V drain to source voltage (Vdss)
FQD7P06TM_NB82050 Applications
There are a lot of ON Semiconductor
FQD7P06TM_NB82050 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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