FQD7N30TF
- Mfr.Part #
- FQD7N30TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 5.5A DPAK
- Stock
- 27,764
- In Stock :
- 27,764
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±30V
- Supplier Device Package :
- D-Pak
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 700mOhm @ 2.75A, 10V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2016
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- QFET®
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Datasheets
- FQD7N30TF

N-Channel Tape & Reel (TR) 700mOhm @ 2.75A, 10V ±30V 610pF @ 25V 17nC @ 10V 300V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD7N30TF Description
Utilizing the exclusive planar stripe and DMOS technology of Fairchild Semiconductor, this N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.
FQD7N30TF Features
? 5.5 A, 300 V, RDS (on), 700 m (max. ), @ 10 V, ID, 2.75 A
? Minimal Gate Fee (Typ. 13 nC)
? Low Crash (Typ. 12 pF)
? Avalanche tested in full
FQD7N30TF Applications
Switching applications
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