FQD6N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

4A

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

300 mJ

Series :

QFET®

Power Dissipation-Max :

80W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Additional Feature :

FAST SWITCHING

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

2Ohm

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

16A

Qualification Status :

COMMERCIAL

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

4A Tc

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

600V