FQD6N25TF
- Mfr.Part #
- FQD6N25TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 4.4A DPAK
- Stock
- 2,383
- In Stock :
- 2,383
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- D-Pak
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 250V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Type :
- Surface Mount
- Published :
- 2016
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 2.2A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- QFET®
- Datasheets
- FQD6N25TF

N-Channel Tape & Reel (TR) 1Ohm @ 2.2A, 10V ±30V 300pF @ 25V 8.5nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD6N25TF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 300pF @ 25V.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQD6N25TF Features
a 250V drain to source voltage (Vdss)
FQD6N25TF Applications
There are a lot of ON Semiconductor
FQD6N25TF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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