FQD6N40CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Turn-Off Delay Time :

21 ns

Power Dissipation :

2.5W

ECCN Code :

EAR99

Additional Feature :

FAST SWITCHING

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

400V

Height :

2.3mm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

400V

Element Configuration :

Single

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Rise Time :

65ns

Power Dissipation-Max :

2.5W Ta 48W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.6mm

Threshold Voltage :

2V

Series :

QFET®

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Current Rating :

4.5A

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Resistance :

1Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

13 ns

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.25A, 10V

Operating Temperature :

-55°C~150°C TJ

Width :

6.1mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

4.5A

Fall Time (Typ) :

38 ns

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

260.37mg

Radiation Hardening :

No

Number of Pins :

3

Lead Free :

Lead Free

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

270 mJ