FQD6N40CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Vgs (Max) :

±30V

Power Dissipation :

2.5W

Resistance :

1Ohm

Continuous Drain Current (ID) :

4.5A

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Turn-Off Delay Time :

21 ns

Pbfree Code :

yes

FET Type :

N-Channel

Radiation Hardening :

No

Turn On Delay Time :

13 ns

Element Configuration :

Single

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

65ns

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation-Max :

2.5W Ta 48W Tc

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Tin (Sn)

Additional Feature :

FAST SWITCHING

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.25A, 10V

Fall Time (Typ) :

38 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

260.37mg

Current Rating :

4.5A

Threshold Voltage :

2V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Number of Elements :

1

ECCN Code :

EAR99

Height :

2.3mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

6.1mm

Number of Terminations :

2

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Length :

6.6mm

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

270 mJ

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

400V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Voltage - Rated DC :

400V

Operating Temperature :

-55°C~150°C TJ