FQD6N40CTM
- Mfr.Part #
- FQD6N40CTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 4.5A DPAK
- Stock
- 7,500
- In Stock :
- 7,500
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 2.25A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 2.3mm
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Width :
- 6.1mm
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 13 ns
- Number of Terminations :
- 2
- REACH SVHC :
- No SVHC
- Length :
- 6.6mm
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 2.5W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 4.5A
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 400V
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 400V
- Weight :
- 260.37mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 625pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Resistance :
- 1Ohm
- Current Rating :
- 4.5A
- Threshold Voltage :
- 2V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.5W Ta 48W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 38 ns
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Series :
- QFET®
- Radiation Hardening :
- No
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 270 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Turn-Off Delay Time :
- 21 ns
- Factory Lead Time :
- 4 Weeks
- Rise Time :
- 65ns
- Additional Feature :
- FAST SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- FQD6N40CTM
FQD6N40CTM Documents

N-Channel Tape & Reel (TR) 1 Ω @ 2.25A, 10V ±30V 625pF @ 25V 20nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD6N40CTM Description
ON Semiconductor's exclusive planar stripe and DMOS technology is used to make this FQD6N40CTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to reduce on-state resistance, improve switching performance, and provide strong avalanche energy strength.
FQD6N40CTM Features
? RDS(on) = 1.0 (Max.) @VGS = 10 V, ID = 2.25 A @4.5 A, 400 V
? Minimal Gate Charge (Typ. 16 nC)
? Low Crss (Typ. 15 pF)
? Avalanche tested to perfection
FQD6N40CTM Applications
energy sources
ballasts for electronic lamps
adjustment of the active power factor (PFC)
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