FQD6N40CTM

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Mfr.Part #
FQD6N40CTM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 400V 4.5A DPAK
Stock
7,500
In Stock :
7,500

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
JEDEC-95 Code :
TO-252AA
Rds On (Max) @ Id, Vgs :
1 Ω @ 2.25A, 10V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Height :
2.3mm
Terminal Form :
Gull wing
ECCN Code :
EAR99
Width :
6.1mm
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Lead Free :
Lead Free
Turn On Delay Time :
13 ns
Number of Terminations :
2
REACH SVHC :
No SVHC
Length :
6.6mm
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
2.5W
Vgs(th) (Max) @ Id :
4V @ 250µA
Continuous Drain Current (ID) :
4.5A
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
400V
Pbfree Code :
yes
Voltage - Rated DC :
400V
Weight :
260.37mg
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 25V
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Resistance :
1Ohm
Current Rating :
4.5A
Threshold Voltage :
2V
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Power Dissipation-Max :
2.5W Ta 48W Tc
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Fall Time (Typ) :
38 ns
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
4.5A Tc
Series :
QFET®
Radiation Hardening :
No
Vgs (Max) :
±30V
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
270 mJ
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Turn-Off Delay Time :
21 ns
Factory Lead Time :
4 Weeks
Rise Time :
65ns
Additional Feature :
FAST SWITCHING
Gate to Source Voltage (Vgs) :
30V
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD6N40CTM from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, FQD6N40CTM pinout, FQD6N40CTM datasheet PDF, FQD6N40CTM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD6N40CTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD6N40CTM


N-Channel Tape & Reel (TR) 1 Ω @ 2.25A, 10V ±30V 625pF @ 25V 20nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD6N40CTM Description


ON Semiconductor's exclusive planar stripe and DMOS technology is used to make this FQD6N40CTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to reduce on-state resistance, improve switching performance, and provide strong avalanche energy strength.


FQD6N40CTM Features


? RDS(on) = 1.0 (Max.) @VGS = 10 V, ID = 2.25 A @4.5 A, 400 V

? Minimal Gate Charge (Typ. 16 nC)

? Low Crss (Typ. 15 pF)

? Avalanche tested to perfection


FQD6N40CTM Applications


energy sources

ballasts for electronic lamps

adjustment of the active power factor (PFC)

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