FQD6N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 45W Tc

Element Configuration :

Single

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rise Time :

65ns

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Power Dissipation :

2.5W

Turn-Off Delay Time :

7.5 ns

Weight :

260.37mg

Drain to Source Breakdown Voltage :

250V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

1Ohm

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

30 ns

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Current Rating :

4.4A

Voltage - Rated DC :

250V

Number of Terminations :

2

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

75 mJ

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.2A, 10V

Turn On Delay Time :

8 ns

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

4.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Case Connection :

DRAIN

Number of Elements :

1