FQD6N50CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.25A, 10V

Power Dissipation :

2.5W

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Number of Pins :

3

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Voltage - Rated DC :

500V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Pbfree Code :

yes

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Rise Time :

35ns

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Weight :

260.37mg

Continuous Drain Current (ID) :

4.5A

Turn-Off Delay Time :

55 ns

Power Dissipation-Max :

2.5W Ta 61W Tc

Series :

QFET®

Number of Elements :

1

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Current Rating :

4.5A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

500V

Fall Time (Typ) :

45 ns

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

10 ns