FQD6N40TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Drain to Source Voltage (Vdss) :

400V

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Drain Current-Max (Abs) (ID) :

4.2A

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

16.8A

Power Dissipation-Max :

2.5W Ta 50W Tc

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

400V

Series :

QFET®

Terminal Finish :

NOT SPECIFIED

Terminal Form :

Gull wing

Case Connection :

DRAIN

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.15 Ω @ 2.1A, 10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

330 mJ

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2