FQD630TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta 46W Tc

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

28A

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Qualification Status :

COMMERCIAL

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Drain Current-Max (Abs) (ID) :

7A

FET Type :

N-Channel

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

Pin Count :

3

Avalanche Energy Rating (Eas) :

163 mJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.4Ohm

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

200V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.5A, 10V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

200V