FQD6N60CTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

16A

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

300 mJ

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Additional Feature :

FAST SWITCHING

Drain Current-Max (Abs) (ID) :

4A

Drain to Source Voltage (Vdss) :

600V

Mounting Type :

Surface Mount

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Power Dissipation-Max :

80W Tc

Drain-source On Resistance-Max :

2Ohm

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V