FQD2P40TM
- Mfr.Part #
- FQD2P40TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 400V 1.56A DPAK
- Stock
- 6,125
- In Stock :
- 6,125
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- -400V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Series :
- QFET®
- Voltage :
- 400V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- Current :
- 18A
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Turn On Delay Time :
- 9 ns
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 6.5 Ω @ 780mA, 10V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 1.56A
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 22 ns
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 1.56A Tc
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 33ns
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.5W Ta 38W Tc
- Factory Lead Time :
- 9 Weeks
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 25 ns
- Power Dissipation :
- 2.5W
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Datasheets
- FQD2P40TM

P-Channel Tape & Reel (TR) 6.5 Ω @ 780mA, 10V ±30V 350pF @ 25V 13nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2P40TM Description
A patented planar stripe and DMOS technology are used to create the FQD2P40TM P-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications are all possible with these devices.
FQD2P40TM Features
-
RoHS Compliant
-
Low Crss ( Typ. 6.5pF)
-
100% avalanche tested
-
Low gate charge ( Typ. 10nC)
-
-1.56A, -400V, RDS(on) = 6.5Ω(Max.) @VGS = -10 V, ID = -0.78A
FQD2P40TM Applications
-
Lighting
-
Audio amplifier
-
DC motor control
-
Switch-mode power supplies
-
Variable switching power applications
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