FQD20N06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage :

55V

Case Connection :

DRAIN

Number of Terminations :

2

Height :

2.3mm

REACH SVHC :

No SVHC

Turn-Off Delay Time :

20 ns

JESD-609 Code :

e3

Mount :

Surface Mount

Rise Time :

45ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Series :

QFET®

Element Configuration :

Single

Continuous Drain Current (ID) :

16.8A

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

60V

Fall Time (Typ) :

25 ns

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

16.8A Tc

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

2.5W Ta 38W Tc

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Turn On Delay Time :

5 ns

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

Width :

6.1mm

Drain to Source Breakdown Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2001

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Number of Pins :

3

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Threshold Voltage :

4V

Rds On (Max) @ Id, Vgs :

63m Ω @ 8.4A, 10V

Length :

6.6mm

Current Rating :

16.8A

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Current :

18A