FQD20N06TM
- Mfr.Part #
- FQD20N06TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 16.8A DPAK
- Stock
- 9,755
- In Stock :
- 9,755
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage :
- 55V
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Height :
- 2.3mm
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 20 ns
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Rise Time :
- 45ns
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±25V
- Series :
- QFET®
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 16.8A
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Power Dissipation :
- 2.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Fall Time (Typ) :
- 25 ns
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 16.8A Tc
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 2.5W Ta 38W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 590pF @ 25V
- Width :
- 6.1mm
- Drain to Source Breakdown Voltage :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2001
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Threshold Voltage :
- 4V
- Rds On (Max) @ Id, Vgs :
- 63m Ω @ 8.4A, 10V
- Length :
- 6.6mm
- Current Rating :
- 16.8A
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Elements :
- 1
- Current :
- 18A
- Datasheets
- FQD20N06TM
FQD20N06TM Documents

N-Channel Tape & Reel (TR) 63m Ω @ 8.4A, 10V ±25V 590pF @ 25V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD20N06TM Description
FQD20N06TM belongs to the family of N-channel QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and withstand high energy pulse based on planar stripe and DMOS technology provided by ON Semiconductor. Due to its high quality and reliable performance, FQD20N06TM is well suited for switching mode power supplies, DC motor control, audio amplifier, variable switching power applications, and so on.
FQD20N06TM Features
-
Planar stripe and DMOS technology
-
Advanced switching performance
-
Low on-state resistance
-
Low gate charge
-
Available in the D-PAK package
FQD20N06TM Applications
-
DC motor control
-
Switching mode power supplies
-
Audio amplifier
-
Variable switching power applications
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