FQD20N06LETM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.075Ohm

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

68.8A

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

60m Ω @ 8.6A, 10V

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

170 mJ

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

17.2A Tc

Number of Elements :

1

Pin Count :

3

Case Connection :

DRAIN

Series :

QFET®

Power Dissipation-Max :

2.5W Ta 38W Tc

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

17.2A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel