FQD20N06LETM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

60m Ω @ 8.6A, 10V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

17.2A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.075Ohm

Avalanche Energy Rating (Eas) :

170 mJ

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

60V

Pin Count :

3

Power Dissipation-Max :

2.5W Ta 38W Tc

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

17.2A

DS Breakdown Voltage-Min :

60V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 25V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

68.8A