FQD20N06TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

155 mJ

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

63m Ω @ 8.4A, 10V

Pulsed Drain Current-Max (IDM) :

67.2A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

16.8A

Vgs (Max) :

±25V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

60V

Drain-source On Resistance-Max :

0.063Ohm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

16.8A Tc

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

Pin Count :

3

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Series :

QFET®

Power Dissipation-Max :

2.5W Ta 38W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE