FQD20N06TF
- Mfr.Part #
- FQD20N06TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 16.8A DPAK
- Stock
- 37,073
- In Stock :
- 37,073
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.063Ohm
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- QFET®
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 16.8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 60V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 16.8A Tc
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 63m Ω @ 8.4A, 10V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±25V
- Avalanche Energy Rating (Eas) :
- 155 mJ
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN
- Power Dissipation-Max :
- 2.5W Ta 38W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 67.2A
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 590pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Datasheets
- FQD20N06TF

N-Channel Tape & Reel (TR) 63m Ω @ 8.4A, 10V ±25V 590pF @ 25V 15nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD20N06TF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 155 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 590pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 16.8A.There is a peak drain current of 67.2A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQD20N06TF Features
the avalanche energy rating (Eas) is 155 mJ
based on its rated peak drain current 67.2A.
a 60V drain to source voltage (Vdss)
FQD20N06TF Applications
There are a lot of Rochester Electronics, LLC
FQD20N06TF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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