FQD2N100TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Width :

6.1mm

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Turn-Off Delay Time :

25 ns

Current Rating :

1.6A

Vgs (Max) :

±30V

Turn On Delay Time :

13 ns

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Resistance :

9Ohm

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

9 Ω @ 800mA, 10V

Series :

QFET®

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

5V @ 250μA

Threshold Voltage :

5V

Contact Plating :

Tin

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Length :

6.6mm

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.5W

Transistor Element Material :

SILICON

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

6.4A

Drain to Source Voltage (Vdss) :

1000V

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Pins :

3

Mounting Type :

Surface Mount

Element Configuration :

Single

Lead Free :

Lead Free

Terminal Form :

Gull wing

Rise Time :

30ns

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Voltage - Rated DC :

900V

Nominal Vgs :

5 V

Drain to Source Breakdown Voltage :

1kV

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Weight :

260.37mg

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Published :

2013

Height :

2.517mm

Fall Time (Typ) :

35 ns

Case Connection :

DRAIN

Power Dissipation-Max :

2.5W Ta 50W Tc

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Continuous Drain Current (ID) :

1.6A