FQD2N100TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

5V

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Continuous Drain Current (ID) :

1.6A

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Radiation Hardening :

No

Current Rating :

1.6A

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

1.6A Tc

Rise Time :

30ns

Pulsed Drain Current-Max (IDM) :

6.4A

Contact Plating :

Tin

Vgs (Max) :

±30V

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Width :

6.1mm

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

Number of Pins :

3

Power Dissipation :

2.5W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

9 Ω @ 800mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Terminal Form :

Gull wing

Fall Time (Typ) :

35 ns

Published :

2013

Turn On Delay Time :

13 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 50W Tc

Lead Free :

Lead Free

Nominal Vgs :

5 V

JESD-30 Code :

R-PSSO-G2

Resistance :

9Ohm

Pbfree Code :

yes

Height :

2.517mm

Number of Channels :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Length :

6.6mm

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Element Configuration :

Single

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

Series :

QFET®

Voltage - Rated DC :

900V

Drain to Source Voltage (Vdss) :

1000V

Drain to Source Breakdown Voltage :

1kV

ECCN Code :

EAR99

Weight :

260.37mg

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

25 ns