FQD20N06TF
- Mfr.Part #
- FQD20N06TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 16.8A DPAK
- Stock
- 7,696
- In Stock :
- 7,696
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 67.2A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 590pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±25V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Series :
- QFET®
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- 260
- Drain Current-Max (Abs) (ID) :
- 16.8A
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 16.8A Tc
- Pin Count :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Avalanche Energy Rating (Eas) :
- 155 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 63m Ω @ 8.4A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.063Ohm
- DS Breakdown Voltage-Min :
- 60V
- Power Dissipation-Max :
- 2.5W Ta 38W Tc
- Datasheets
- FQD20N06TF
FQD20N06TF Documents

N-Channel Tape & Reel (TR) 63m Ω @ 8.4A, 10V ±25V 590pF @ 25V 15nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD20N06TF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 155 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 590pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 16.8A.There is a peak drain current of 67.2A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQD20N06TF Features
the avalanche energy rating (Eas) is 155 mJ
based on its rated peak drain current 67.2A.
a 60V drain to source voltage (Vdss)
FQD20N06TF Applications
There are a lot of Rochester Electronics, LLC
FQD20N06TF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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