FQD2P40TF
- Mfr.Part #
- FQD2P40TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 400V 1.56A DPAK
- Stock
- 6,879
- In Stock :
- 6,879
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 6.24A
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 6.5 Ω @ 780mA, 10V
- Drain Current-Max (Abs) (ID) :
- 1.56A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 2.5W Ta 38W Tc
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 1.56A Tc
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 400V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Qualification Status :
- COMMERCIAL
- FET Type :
- P-Channel
- Avalanche Energy Rating (Eas) :
- 120 mJ
- Vgs (Max) :
- ±30V
- Series :
- QFET®
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Datasheets
- FQD2P40TF

P-Channel Tape & Reel (TR) 6.5 Ω @ 780mA, 10V ±30V 350pF @ 25V 13nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2P40TF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 120 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 25V.1.56A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 6.24A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 400V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 400V.Using drive voltage (10V) reduces this device's overall power consumption.
FQD2P40TF Features
the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 6.24A.
a 400V drain to source voltage (Vdss)
FQD2P40TF Applications
There are a lot of Rochester Electronics, LLC
FQD2P40TF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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