FQD2N90TF
- Mfr.Part #
- FQD2N90TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 1.7A DPAK
- Stock
- 27
- In Stock :
- 27
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Series :
- QFET®
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- MATTE TIN
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Pin Count :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 2
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Avalanche Energy Rating (Eas) :
- 170 mJ
- Pulsed Drain Current-Max (IDM) :
- 6.8A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 500pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 7.2 Ω @ 850mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Tc
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 900V
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 1.7A
- DS Breakdown Voltage-Min :
- 900V
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FQD2N90TF

N-Channel Tape & Reel (TR) 7.2 Ω @ 850mA, 10V ±30V 500pF @ 25V 15nC @ 10V 900V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N90TF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 170 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 500pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 1.7A.Peak drain current is 6.8A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQD2N90TF Features
the avalanche energy rating (Eas) is 170 mJ
based on its rated peak drain current 6.8A.
a 900V drain to source voltage (Vdss)
FQD2N90TF Applications
There are a lot of Rochester Electronics, LLC
FQD2N90TF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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